CSD18511Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

27A

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

159A Tc

Thickness :

1mm

Drain-source On Resistance-Max :

0.0035Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 24A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Width :

6mm

Number of Elements :

1

Case Connection :

DRAIN

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5850pF @ 10V

FET Type :

N-Channel

Series :

NexFET™

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Length :

4.9mm

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

5

Feedback Cap-Max (Crss) :

309 pF

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Factory Lead Time :

16 Weeks

Base Part Number :

CSD18511

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

157 mJ

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Pins :

8

Power Dissipation-Max :

104W Tc