CSD18511KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

110A

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

188W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Vgs (Max) :

±20V

Height :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Width :

8.7mm

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Terminations :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Drain-source On Resistance-Max :

0.0042Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5940pF @ 20V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Series :

NexFET™

Avalanche Energy Rating (Eas) :

156 mJ

Surface Mount :

No

Packaging :

Tube

Number of Pins :

3

Length :

10.16mm

Pulsed Drain Current-Max (IDM) :

400A

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Base Part Number :

CSD18511

DS Breakdown Voltage-Min :

40V

Factory Lead Time :

6 Weeks

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

194A Ta

Drain to Source Voltage (Vdss) :

40V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 100A, 10V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Thickness :

4.58mm