CSD18510Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

DS Breakdown Voltage-Min :

40V

Vgs (Max) :

±20V

Base Part Number :

CSD18510

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Surface Mount :

yes

Series :

NexFET™

Terminal Form :

NO LEAD

Factory Lead Time :

12 Weeks

Number of Elements :

1

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

40V

JESD-609 Code :

e4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Feedback Cap-Max (Crss) :

551 pF

Mounting Type :

Surface Mount

Length :

5mm

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Thickness :

950μm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Drain Current-Max (Abs) (ID) :

42A

Element Configuration :

Single

Pbfree Code :

yes

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Width :

6mm

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 20V

Package / Case :

8-PowerTDFN

Rds On (Max) @ Id, Vgs :

0.96m Ω @ 32A, 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

156W Tc

Pulsed Drain Current-Max (IDM) :

400A

Drain-source On Resistance-Max :

0.0016Ohm