CSD18510KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

200A

JESD-609 Code :

e3

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

AVALANCHE RATED

Feedback Cap-Max (Crss) :

551 pF

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

274A Tc

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 100A, 10V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

40V

Case Connection :

DRAIN

Number of Pins :

3

FET Type :

N-Channel

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0026Ohm

Gate Charge (Qg) (Max) @ Vgs :

132nC @ 10V

Thickness :

4.44mm

Series :

NexFET™

Base Part Number :

CSD18510

Surface Mount :

yes

Length :

10.18mm

Power Dissipation-Max :

250W Ta

Height :

4.83mm

Pulsed Drain Current-Max (IDM) :

400A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 15V

Pbfree Code :

yes

Width :

8.41mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

2 (1 Year)