CSD18503Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Thickness :

1mm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Position :

Dual

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Contact Plating :

Copper, Tin

Pulsed Drain Current-Max (IDM) :

321A

Number of Elements :

1

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

2.6 ns

Number of Terminations :

5

Series :

NexFET™

Drain-source On Resistance-Max :

0.0062Ohm

DS Breakdown Voltage-Min :

40V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 22A, 10V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

3.1W Ta 120W Tc

Terminal Finish :

Matte Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Avalanche Energy Rating (Eas) :

157 mJ

Turn-Off Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

19A

Package / Case :

8-PowerTDFN

Packaging :

Tape and Reel (TR)

Length :

4.9mm

Turn On Delay Time :

4.5 ns

Element Configuration :

Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2640pF @ 20V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Base Part Number :

CSD18503

Rise Time :

8.8ns

Width :

6mm

Feedback Cap-Max (Crss) :

16 pF

Terminal Form :

NO LEAD

Vgs(th) (Max) @ Id :

2.3V @ 250μA