CSD18503Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

CSD18503

Threshold Voltage :

1.8V

ECCN Code :

EAR99

Power Dissipation-Max :

3.1W Ta 120W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn-Off Delay Time :

15 ns

Thickness :

1mm

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

19A Ta 100A Tc

Packaging :

Cut Tape (CT)

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Terminations :

5

Number of Elements :

1

Turn On Delay Time :

4.5 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 22A, 10V

Mount :

Surface Mount

Terminal Position :

Dual

Number of Channels :

1

Fall Time (Typ) :

2.6 ns

Power Dissipation :

3.1W

Rise Time :

8.8ns

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2640pF @ 20V

Number of Pins :

8

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

19A

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0062Ohm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Width :

6mm

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

40V

Series :

NexFET™

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Height :

1.1mm

Vgs (Max) :

±20V

Length :

4.9mm