CSD18503KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

143W

Width :

8.7mm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 20V

Mount :

Through Hole

FET Type :

N-Channel

Fall Time (Typ) :

6.8 ns

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

4.7mm

Radiation Hardening :

No

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Drain-source On Resistance-Max :

0.0068Ohm

Series :

NexFET™

Length :

10.16mm

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Element Configuration :

Single

JESD-609 Code :

e3

Package / Case :

TO-220-3

Base Part Number :

CSD18503

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Rise Time :

5.3ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Drain to Source Breakdown Voltage :

40V

Number of Pins :

3

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Terminations :

3

Power Dissipation-Max :

188W Tc

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Case Connection :

DRAIN

Thickness :

4.58mm

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Turn-Off Delay Time :

14 ns

Turn On Delay Time :

5.7 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE