CSD18502Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

CSD18502

Height :

1.05mm

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

NexFET™

Drain Current-Max (Abs) (ID) :

26A

Input Capacitance (Ciss) (Max) @ Vds :

5070pF @ 20V

Fall Time (Typ) :

4 ns

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Element Configuration :

Single

Package / Case :

8-PowerTDFN

Power Dissipation-Max :

3.2W Ta 156W Tc

Number of Elements :

1

Power Dissipation :

3.2W

ECCN Code :

EAR99

Radiation Hardening :

No

FET Type :

N-Channel

Threshold Voltage :

1.8V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

6mm

Mount :

Surface Mount

Turn On Delay Time :

5.3 ns

Drain-source On Resistance-Max :

0.0033Ohm

Rise Time :

6.8ns

Terminal Position :

Dual

Turn-Off Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 30A, 10V

Factory Lead Time :

6 Weeks

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Pbfree Code :

yes

Continuous Drain Current (ID) :

100A

Feedback Cap-Max (Crss) :

27 pF

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Length :

5mm

Thickness :

950μm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

26A Ta 100A Tc