CSD18502KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4680pF @ 20V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Series :

NexFET™

Mounting Type :

Through Hole

Width :

8.7mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

Length :

10.16mm

Thickness :

4.58mm

Power Dissipation-Max :

259W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

400A

ECCN Code :

EAR99

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Feedback Cap-Max (Crss) :

26 pF

Transistor Element Material :

SILICON

Turn On Delay Time :

11 ns

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 100A, 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Contact Plating :

Tin

Number of Pins :

3

Pbfree Code :

yes

Base Part Number :

CSD18502

REACH SVHC :

No SVHC

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

40V

Power Dissipation :

216W

Fall Time (Typ) :

9.3 ns

Package / Case :

TO-220-3

Threshold Voltage :

1.8V

Height :

4.7mm

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Nominal Vgs :

1.8 V

Turn-Off Delay Time :

33 ns

Number of Terminations :

3

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Rise Time :

7.3ns

Mount :

Through Hole

Continuous Drain Current (ID) :

100A

DS Breakdown Voltage-Min :

40V