CSD18501Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerTDFN

Transistor Application :

SWITCHING

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.3V @ 250μA

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Width :

6mm

Fall Time (Typ) :

3.4 ns

FET Type :

N-Channel

Power Dissipation-Max :

3.1W Ta 150W Tc

Lifecycle Status :

ACTIVE (Last Updated: 6 hours ago)

Drain-source On Resistance-Max :

0.0043Ohm

Factory Lead Time :

6 Weeks

Vgs (Max) :

±20V

Base Part Number :

CSD18501

Peak Reflow Temperature (Cel) :

260

Feedback Cap-Max (Crss) :

23 pF

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

22A Ta 100A Tc

Height :

1.1mm

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.1W

Continuous Drain Current (ID) :

100A

Mount :

Surface Mount

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

22A

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

4.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Thickness :

1mm

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

NexFET™

Turn-Off Delay Time :

20 ns

Transistor Element Material :

SILICON

Number of Pins :

8

Packaging :

Cut Tape (CT)

Rise Time :

10ns

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

40V

Threshold Voltage :

1.8V

Length :

4.9mm

Radiation Hardening :

No

JESD-609 Code :

e3