CSD17579Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

3.1W Ta 36W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 15V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0133Ohm

Vgs(th) (Max) @ Id :

2V @ 250μA

Continuous Drain Current (ID) :

25A

Gate to Source Voltage (Vgs) :

20V

Width :

6mm

Rds On (Max) @ Id, Vgs :

9.7m Ω @ 8A, 10V

Factory Lead Time :

6 Weeks

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Terminations :

5

Series :

NexFET™

Vgs (Max) :

±20V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Fall Time (Typ) :

1 ns

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Feedback Cap-Max (Crss) :

52 pF

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

14.5 mJ

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Thickness :

1mm

Element Configuration :

Single

Turn-Off Delay Time :

13 ns

Length :

4.9mm

Turn On Delay Time :

3 ns

Gate Charge (Qg) (Max) @ Vgs :

15.1nC @ 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Drain Current-Max (Abs) (ID) :

14A

Base Part Number :

CSD17579

Pulsed Drain Current-Max (IDM) :

105A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

Rise Time :

7ns

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN