CSD17579Q3AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Continuous Drain Current (ID) :

20A

Series :

NexFET™

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

106A

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Turn-Off Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Width :

3.3mm

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Element Configuration :

Single

Feedback Cap-Max (Crss) :

49 pF

Mount :

Surface Mount

Lead Free :

Lead Free

Power Dissipation-Max :

3.2W Ta 29W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

FET Type :

N-Channel

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

998pF @ 15V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0142Ohm

Avalanche Energy Rating (Eas) :

14 mJ

Length :

3.3mm

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Turn On Delay Time :

2 ns

Fall Time (Typ) :

1 ns

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

10.2m Ω @ 8A, 10V

Base Part Number :

CSD17579

Pbfree Code :

yes

Case Connection :

DRAIN

Rise Time :

5ns

Drain Current-Max (Abs) (ID) :

11A

Thickness :

800μm

Terminal Form :

Flat

Contact Plating :

Tin

Package / Case :

8-PowerVDFN

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.9V @ 250μA