CSD17578Q3AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Thickness :

800μm

Length :

3.3mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Surface Mount

Fall Time (Typ) :

1 ns

Power Dissipation-Max :

3.2W Ta 37W Tc

Drain to Source Voltage (Vdss) :

30V

Width :

3.3mm

Base Part Number :

CSD17578

Turn-Off Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Terminal Position :

Dual

Element Configuration :

Single

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

24 mJ

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

20A

Number of Terminations :

5

Contact Plating :

Tin

Rise Time :

6ns

Drain-source On Resistance-Max :

0.0094Ohm

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 10A, 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Series :

NexFET™

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Vgs (Max) :

±20V

Package / Case :

8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs :

22.2nC @ 10V

Number of Channels :

1

Feedback Cap-Max (Crss) :

73 pF

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

2 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 15V

Number of Elements :

1