CSD17577Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Series :

NexFET™

Power Dissipation-Max :

3W Ta 53W Tc

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Factory Lead Time :

6 Weeks

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0042Ohm

Turn On Delay Time :

3 ns

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

60A

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

2310pF @ 15V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Length :

4.9mm

Width :

6mm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Terminal Position :

Dual

Number of Channels :

1

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

22A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

3W

Number of Elements :

1

Threshold Voltage :

1.4V

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 18A, 10V

Lead Free :

Contains Lead

FET Type :

N-Channel

Vgs (Max) :

±20V

Fall Time (Typ) :

2 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Number of Terminations :

5

Thickness :

1mm

Base Part Number :

CSD17577

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Contact Plating :

Tin

Rise Time :

12ns

Turn-Off Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

39 mJ