CSD17576Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

100A

Number of Pins :

8

Thickness :

950μm

Turn-Off Delay Time :

23 ns

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Pbfree Code :

yes

Series :

NexFET™

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

400A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

30A

JESD-609 Code :

e4

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

30V

Width :

6mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

3.1W Ta 125W Tc

Turn On Delay Time :

5 ns

FET Type :

N-Channel

Number of Terminations :

5

Terminal Form :

NO LEAD

Base Part Number :

CSD17576

Drain-source On Resistance-Max :

0.0029Ohm

Length :

5mm

Mounting Type :

Surface Mount

Power Dissipation :

3.1W

Contact Plating :

Gold

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.8V @ 250μA

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4430pF @ 15V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2m Ω @ 25A, 10V

Rise Time :

16ns

Fall Time (Typ) :

3 ns

Factory Lead Time :

6 Weeks

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

not_compliant