CSD17575Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Base Part Number :

CSD17575

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

4420pF @ 15V

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Vgs (Max) :

±20V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Length :

3.3mm

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Contact Plating :

Tin

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

60A

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 25A, 10V

Width :

3.3mm

DS Breakdown Voltage-Min :

30V

Avalanche Energy Rating (Eas) :

115 mJ

Number of Elements :

1

Number of Terminations :

5

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

27A

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

3 ns

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

20 ns

Feedback Cap-Max (Crss) :

204 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

4 ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Thickness :

1mm

Power Dissipation-Max :

2.8W Ta 108W Tc

FET Type :

N-Channel

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Rise Time :

10ns

Pulsed Drain Current-Max (IDM) :

240A

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0032Ohm