CSD17571Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

468pF @ 15V

Additional Feature :

AVALANCHE RATED

Mount :

Surface Mount

Turn On Delay Time :

5.3 ns

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

FET Type :

N-Channel

Power Dissipation :

2.5W

Package / Case :

6-WDFN Exposed Pad

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

2V @ 250μA

Fall Time (Typ) :

26 ns

Avalanche Energy Rating (Eas) :

7.2 mJ

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.029Ohm

Element Configuration :

Single

Base Part Number :

CSD17571

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Series :

NexFET™

Vgs (Max) :

±20V

Thickness :

750μm

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

NO LEAD

Continuous Drain Current (ID) :

22A

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

39A

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 4.5V

RoHS Status :

ROHS3 Compliant

Length :

2mm

Number of Terminations :

6

JESD-609 Code :

e4

Rise Time :

19ns

Turn-Off Delay Time :

8 ns

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Case Connection :

DRAIN

Width :

2mm

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 4.5V

Number of Pins :

6

Transistor Element Material :

SILICON