CSD17570Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Contact Plating :

Gold

Avalanche Energy Rating (Eas) :

450 mJ

Mount :

Surface Mount

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

360A

Drain Current-Max (Abs) (ID) :

53A

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

0.69m Ω @ 50A, 10V

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

13600pF @ 15V

Thickness :

950μm

Gate to Source Voltage (Vgs) :

20V

Width :

6mm

FET Type :

N-Channel

Number of Terminations :

5

Number of Elements :

1

Turn-Off Delay Time :

144 ns

Additional Feature :

AVALANCHE RATED

Length :

5mm

Rise Time :

36ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

CSD17570

Series :

NexFET™

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Drain-source On Resistance-Max :

0.00092Ohm

Pbfree Code :

yes

Element Configuration :

Single

Continuous Drain Current (ID) :

100A

Transistor Element Material :

SILICON

Turn On Delay Time :

5 ns

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

44 ns

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

121nC @ 4.5V

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Pins :

8

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Power Dissipation-Max :

3.2W Ta