CSD17559Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Thickness :

1mm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

40A Ta 100A Tc

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

41ns

Continuous Drain Current (ID) :

100A

Rds On (Max) @ Id, Vgs :

1.15m Ω @ 40A, 10V

Lead Free :

Contains Lead

Height :

1.05mm

Width :

6mm

Pulsed Drain Current-Max (IDM) :

400A

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

REACH SVHC :

No SVHC

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1.4V

Base Part Number :

CSD17559

Package / Case :

8-PowerTDFN

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminations :

5

Mount :

Surface Mount

Pbfree Code :

yes

Power Dissipation-Max :

3.2W Ta 96W Tc

Number of Pins :

8

Series :

NexFET™

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-609 Code :

e3

Turn-Off Delay Time :

32 ns

Drain Current-Max (Abs) (ID) :

40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1.7V @ 250μA

Length :

5mm

Power Dissipation :

3.2W

Fall Time (Typ) :

14 ns