CSD17556Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

14 ns

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

34A

Lead Free :

Contains Lead

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Turn-Off Delay Time :

27 ns

Base Part Number :

CSD17556

Vgs (Max) :

±20V

Rise Time :

26ns

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

215A

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Series :

NexFET™

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 40A, 10V

Pulsed Drain Current-Max (IDM) :

214A

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Mount :

Surface Mount

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.65V @ 250μA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Factory Lead Time :

6 Weeks

Thickness :

950μm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

12 ns

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

500 mJ

Case Connection :

DRAIN

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

3.1W Ta 191W Tc

Terminal Form :

NO LEAD

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6mm

Package / Case :

8-PowerTDFN

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 4.5V

Length :

5mm