CSD17552Q3A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.6W Ta

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6m Ω @ 11A, 10V

Vgs (Max) :

±20V

Power Dissipation :

2.6W

Current - Continuous Drain (Id) @ 25°C :

15A Ta 60A Tc

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

CSD17552

Terminal Position :

Dual

Fall Time (Typ) :

3.4 ns

Factory Lead Time :

6 Weeks

Mount :

Surface Mount

Pbfree Code :

yes

Turn On Delay Time :

7.2 ns

Package / Case :

8-PowerVDFN

Height :

900μm

Turn-Off Delay Time :

11 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Terminations :

5

Rise Time :

7.4ns

Contact Plating :

Tin

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 15V

Series :

NexFET™

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

45 mJ

Feedback Cap-Max (Crss) :

36 pF

ECCN Code :

EAR99

Continuous Drain Current (ID) :

60A

Threshold Voltage :

1.5V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

3.3mm

Width :

3.3mm

Gate to Source Voltage (Vgs) :

20V

Thickness :

800μm

Pin Count :

8

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat