CSD17552Q3A
- Mfr.Part #
- CSD17552Q3A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 15A/60A 8SON
- Stock
- 5,393
- In Stock :
- 5,393
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Flat
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 11A, 10V
- Turn On Delay Time :
- 7.2 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Terminal Position :
- Dual
- Packaging :
- Cut Tape (CT)
- Rise Time :
- 7.4ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.3mm
- Turn-Off Delay Time :
- 11 ns
- Power Dissipation :
- 2.6W
- Height :
- 900μm
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 60A
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Feedback Cap-Max (Crss) :
- 36 pF
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- NexFET™
- Number of Terminations :
- 5
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 3.4 ns
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.9V @ 250μA
- Package / Case :
- 8-PowerVDFN
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 30V
- Base Part Number :
- CSD17552
- JESD-609 Code :
- e3
- Thickness :
- 800μm
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation-Max :
- 2.6W Ta
- Length :
- 3.3mm
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta 60A Tc
- Factory Lead Time :
- 6 Weeks
- Threshold Voltage :
- 1.5V
- Pin Count :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- CSD17552Q3A

N-Channel Cut Tape (CT) 6m Ω @ 11A, 10V ±20V 2050pF @ 15V 12nC @ 4.5V 8-PowerVDFN
CSD17552Q3A Description
This CSD17552Q3A is a 30 V, 5.5 m, 3.3 mm SON NexFETTM power MOSFET with a 3.3 mm SON NexFETTM power MOSFET with a 3.3 mm SON NexFETTM power MOSFET with a 3.3 mm SON NexFETTM power MOSFET with a 3.3
CSD17552Q3A Features
-
Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Pb Free
-
RoHS Compliant
-
Halogen Free
-
SON 3.3 mm × 3.3 mm Plastic Package
CSD17552Q3A Applications
-
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
-
Optimized for Control FET Applications
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