CSD17551Q5A
- Mfr.Part #
- CSD17551Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 48A 8VSON
- Stock
- 4,000
- In Stock :
- 4,000
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Fall Time (Typ) :
- 4.3 ns
- Thickness :
- 1mm
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Power Dissipation :
- 3W
- Continuous Drain Current (ID) :
- 48A
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- Additional Feature :
- AVALANCHE RATED
- Length :
- 4.9mm
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 6mm
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-PowerTDFN
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 11.9 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Base Part Number :
- CSD17551
- Rds On (Max) @ Id, Vgs :
- 8.8m Ω @ 11A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 1.7V
- Contact Plating :
- Tin
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- DS Breakdown Voltage-Min :
- 30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 7.2nC @ 4.5V
- Number of Pins :
- 8
- Lead Free :
- Contains Lead
- Turn On Delay Time :
- 9.1 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 3W Ta
- Transistor Application :
- SWITCHING
- Rise Time :
- 15.5ns
- Radiation Hardening :
- No
- Feedback Cap-Max (Crss) :
- 24 pF
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1272pF @ 15V
- Mounting Type :
- Surface Mount
- Series :
- NexFET™
- Datasheets
- CSD17551Q5A

N-Channel Cut Tape (CT) 8.8m Ω @ 11A, 10V ±20V 1272pF @ 15V 7.2nC @ 4.5V 30V 8-PowerTDFN
CSD17551Q5A Description
CSD17551Q5A is a 30v N-Channel NexFET? Power MOSFET. The NexFET power MOSFET CSD17551Q5A has been designed to minimize losses in power conversion applications. The CSD17551Q5A can be applied in Point of load Synchronous Buck in Networking, Telecom, and Computing Systems, and Optimized for Control FET Applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor CSD17551Q5A is in the VSONP-8 package with 3W power dissipation.
CSD17551Q5A Features
-
Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Pb Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
SON 5-mm x 6-mm Plastic Package
CSD17551Q5A Applications
-
Networking
-
Telecom
-
Computing Systems
-
Optimized for Control FET Applications
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