CSD17551Q3A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.6V

JESD-609 Code :

e3

Nominal Vgs :

1.6 V

Mount :

Surface Mount

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

12 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

2.6W Ta

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

3.3mm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.6W

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Base Part Number :

CSD17551

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Package / Case :

8-PowerVDFN

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

24ns

Height :

900μm

ECCN Code :

EAR99

Terminal Form :

Flat

Lead Free :

Lead Free

REACH SVHC :

Unknown

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Elements :

1

Contact Plating :

Tin

Series :

NexFET™

Additional Feature :

AVALANCHE RATED

Length :

3.3mm

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 15V

Turn On Delay Time :

8 ns

Rds On (Max) @ Id, Vgs :

9m Ω @ 11A, 10V

Fall Time (Typ) :

3.4 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

12A

Number of Channels :

1

Thickness :

800μm

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Case Connection :

DRAIN

Radiation Hardening :

No