CSD17527Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Thickness :

1mm

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

506pF @ 15V

Terminal Position :

Dual

Terminal Form :

Flat

JESD-609 Code :

e3

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

65A

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Width :

6mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

6 Weeks

Vgs (Max) :

±20V

Power Dissipation :

3W

Base Part Number :

CSD17527

Rise Time :

8.2ns

Length :

4.9mm

Avalanche Energy Rating (Eas) :

45 mJ

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Radiation Hardening :

No

Pbfree Code :

yes

Turn-Off Delay Time :

9.8 ns

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Pins :

8

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 4.5V

Rds On (Max) @ Id, Vgs :

10.8m Ω @ 11A, 10V

Element Configuration :

Single

Turn On Delay Time :

5.6 ns

Fall Time (Typ) :

3.2 ns

Feedback Cap-Max (Crss) :

33 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-F5

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mount :

Surface Mount

Power Dissipation-Max :

3W Ta

Pin Count :

8