CSD17483F4

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

1.5A

Width :

635μm

Gate Charge (Qg) (Max) @ Vgs :

1.3nC @ 4.5V

Length :

1.035mm

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Fall Time (Typ) :

3.4 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Number of Channels :

1

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

12V

Terminal Position :

BOTTOM

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Height :

350μm

Element Configuration :

Single

Turn-Off Delay Time :

10.6 ns

Rise Time :

1.3ns

Number of Elements :

1

Power Dissipation-Max :

500mW Ta

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Package / Case :

3-XFDFN

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

5A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

3.3 ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

240m Ω @ 500mA, 8V

Number of Terminations :

3

Mount :

Surface Mount

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.55Ohm

Terminal Form :

NO LEAD

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Base Part Number :

CSD17483

Factory Lead Time :

8 Weeks