CSD17382F4T
- Mfr.Part #
- CSD17382F4T
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.3A 3PICOSTAR
- Stock
- 66,882
- In Stock :
- 66,882
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- CSD17382
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 8V
- Length :
- 1.035mm
- Avalanche Energy Rating (Eas) :
- 2.1 mJ
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 347pF @ 15V
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Feedback Cap-Max (Crss) :
- 19.5 pF
- Transistor Element Material :
- SILICON
- Terminal Form :
- NO LEAD
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Vgs (Max) :
- 10V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 2.7nC @ 4.5V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 14.8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- FemtoFET™
- Width :
- 635μm
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 500mW Ta
- Terminal Position :
- BOTTOM
- Rds On (Max) @ Id, Vgs :
- 64m Ω @ 500mA, 8V
- Continuous Drain Current (ID) :
- 2.3A
- Threshold Voltage :
- 900mV
- Package / Case :
- 3-XFDFN
- Drain-source On Resistance-Max :
- 0.18ohm
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Datasheets
- CSD17382F4T

N-Channel Tape & Reel (TR) 64m Ω @ 500mA, 8V 10V 347pF @ 15V 2.7nC @ 4.5V 30V 3-XFDFN
CSD17382F4T Description
The footprint of many handheld and mobile applications is reduced by the design and optimization of this 30-V, 54-m, N-Channel FemtoFETTM MOSFET technology. Standard tiny signal MOSFETs can be replaced with this technology, which also offers a footprint size reduction of at least 60%.
CSD17382F4T Features
-
Low on-resistance
-
Low Qg and Qgd
-
Low threshold voltage
-
Ultra-small footprint (0402 case size)
-
Lead and halogen free
-
RoHS compliant
CSD17382F4T Applications
-
Optimized for load switch applications
-
Optimized for general purpose switching applications
-
Single-cell battery applications
-
Handheld and mobile applications
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