CSD17381F4T
- Mfr.Part #
- CSD17381F4T
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 3.1A 3PICOSTAR
- Stock
- 25,640
- In Stock :
- 25,640
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 1.35nC @ 4.5V
- Threshold Voltage :
- 850mV
- Mount :
- Surface Mount
- Feedback Cap-Max (Crss) :
- 2.9 pF
- Turn On Delay Time :
- 3.4 ns
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Ta
- Package / Case :
- 3-XFDFN
- Drain to Source Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Series :
- FemtoFET™
- Gate to Source Voltage (Vgs) :
- 12V
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Additional Feature :
- ULTRA LOW RESISTANCE
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- CSD17381
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Terminal Position :
- BOTTOM
- Width :
- 635μm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Drain-source On Resistance-Max :
- 0.25Ohm
- Turn-Off Delay Time :
- 10.8 ns
- Number of Pins :
- 3
- Height :
- 350μm
- Power Dissipation-Max :
- 500mW Ta
- Fall Time (Typ) :
- 3.6 ns
- Factory Lead Time :
- 8 Weeks
- Continuous Drain Current (ID) :
- 3.1A
- Rds On (Max) @ Id, Vgs :
- 109m Ω @ 500mA, 8V
- Number of Elements :
- 1
- Length :
- 1.035mm
- Terminal Form :
- NO LEAD
- Input Capacitance (Ciss) (Max) @ Vds :
- 195pF @ 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rise Time :
- 1.4ns
- Transistor Element Material :
- SILICON
- Datasheets
- CSD17381F4T

N-Channel Tape & Reel (TR) 109m Ω @ 500mA, 8V 195pF @ 15V 1.35nC @ 4.5V 3-XFDFN
CSD17381F4T Description
The design and optimization of this 90 m, 30 V N-Channel FemtoFETTM MOSFET technology minimizes the footprint in numerous handheld and mobile applications. Standard tiny signal MOSFETs can be replaced with this technology, which also offers a footprint size reduction of at least 60%.
CSD17381F4T Feature
-
Ultra-low on-resistance
-
Ultra-low Qg and Qgd
-
Low threshold voltage
-
Ultra-small footprint (0402 case size): – 1.0 mm × 0.6 mm
-
Ultra-low profile: – 0.36 mm height
-
Integrated ESD protection diode
-
Lead and halogen free
-
RoHS compliant
CSD17381F4T Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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