CSD17327Q5A
- Mfr.Part #
- CSD17327Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 65A 8VSON
- Stock
- 28,309
- In Stock :
- 28,309
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Length :
- 4.9mm
- Power Dissipation :
- 3W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 8V
- Package / Case :
- 8-PowerTDFN
- Rds On (Max) @ Id, Vgs :
- 12.2m Ω @ 11A, 8V
- Power Dissipation-Max :
- 3W Ta
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±10V
- Terminal Form :
- NO LEAD
- Feedback Cap-Max (Crss) :
- 33 pF
- Pbfree Code :
- yes
- Thickness :
- 1mm
- Gate Charge (Qg) (Max) @ Vgs :
- 3.4nC @ 4.5V
- FET Type :
- N-Channel
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Base Part Number :
- CSD17327
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 506pF @ 15V
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 6mm
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Pin Count :
- 8
- Series :
- NexFET™
- Packaging :
- Cut Tape (CT)
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Continuous Drain Current (ID) :
- 65A
- Avalanche Energy Rating (Eas) :
- 45 mJ
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- CSD17327Q5A

N-Channel Cut Tape (CT) 12.2m Ω @ 11A, 8V ±10V 506pF @ 15V 3.4nC @ 4.5V 8-PowerTDFN
CSD17327Q5A Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 45 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 506pF @ 15V.This device conducts a continuous drain current (ID) of 65A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 8V volts (4.5V 8V).
CSD17327Q5A Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 30V voltage
CSD17327Q5A Applications
There are a lot of Texas Instruments
CSD17327Q5A applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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