CSD17318Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

10V

Height :

800μm

Power Dissipation :

2.5W

FET Type :

N-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

879pF @ 15V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 8V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

5 ns

ECCN Code :

EAR99

Thickness :

750μm

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.03Ohm

Pbfree Code :

yes

Number of Pins :

6

JESD-609 Code :

e4

Rds On (Max) @ Id, Vgs :

15.1m Ω @ 8A, 8V

Package / Case :

6-WDFN Exposed Pad

Element Configuration :

Single

Vgs (Max) :

±10V

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

CSD17318

Number of Elements :

1

Length :

2mm

Avalanche Energy Rating (Eas) :

7.7 mJ

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Width :

2mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1

Power Dissipation-Max :

16W Tc

Terminal Form :

NO LEAD

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Turn-Off Delay Time :

13 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Terminations :

6

Continuous Drain Current (ID) :

10A