CSD17313Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Position :

Dual

Case Connection :

DRAIN

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

10V

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Pin Count :

8

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

5A

Number of Pins :

6

Number of Elements :

1

Radiation Hardening :

No

Factory Lead Time :

6 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Threshold Voltage :

1.3V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 15V

Lead Free :

Lead Free

Rise Time :

3.9ns

Height :

800μm

Power Dissipation :

2.3W

Rds On (Max) @ Id, Vgs :

30m Ω @ 4A, 8V

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

5A Tc

FET Type :

N-Channel

Length :

2mm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

2.7nC @ 4.5V

Turn On Delay Time :

2.8 ns

Width :

2mm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

6-WDFN Exposed Pad

Pulsed Drain Current-Max (IDM) :

20A

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Turn-Off Delay Time :

4.2 ns

Peak Reflow Temperature (Cel) :

260

Thickness :

750μm

Drain Current-Max (Abs) (ID) :

5A

Base Part Number :

CSD17313

Vgs (Max) :

+10V, -8V

Fall Time (Typ) :

1.3 ns

Power Dissipation-Max :

2.3W Ta

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.042Ohm