CSD17313Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

+10V, -8V

Fall Time (Typ) :

1.3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

6-WDFN Exposed Pad

Continuous Drain Current (ID) :

5A

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Threshold Voltage :

1.3V

Drain-source On Resistance-Max :

0.042Ohm

Terminal Position :

Dual

Transistor Element Material :

SILICON

Number of Terminations :

6

Lead Free :

Lead Free

FET Type :

N-Channel

Width :

2mm

Pbfree Code :

yes

Base Part Number :

CSD17313

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

Drain Current-Max (Abs) (ID) :

5A

Gate Charge (Qg) (Max) @ Vgs :

2.7nC @ 4.5V

Rds On (Max) @ Id, Vgs :

30m Ω @ 4A, 8V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Turn On Delay Time :

2.8 ns

Mount :

Surface Mount

Pin Count :

8

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 15V

Thickness :

750μm

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation :

2.3W

Height :

800μm

Element Configuration :

Single

Number of Elements :

1

Length :

2mm

Rise Time :

3.9ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

4.2 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Number of Pins :

6

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

10V

Series :

NexFET™

JESD-609 Code :

e4

Power Dissipation-Max :

2.3W Ta

Operating Temperature :

-55°C~150°C TJ