CSD17311Q5
- Mfr.Part #
- CSD17311Q5
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 32A/100A 8VSON
- Stock
- 3,154
- In Stock :
- 3,154
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 32A
- Fall Time (Typ) :
- 12 ns
- Vgs(th) (Max) @ Id :
- 1.6V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 32A Ta 100A Tc
- Base Part Number :
- CSD17311
- Package / Case :
- 8-PowerTDFN
- Turn On Delay Time :
- 12 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Height :
- 1.05mm
- Element Configuration :
- Single
- Threshold Voltage :
- 1.2V
- Pin Count :
- 8
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 30A, 8V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4280pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 4.5V
- Width :
- 6mm
- RoHS Status :
- ROHS3 Compliant
- Series :
- NexFET™
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 10V
- Factory Lead Time :
- 12 Weeks
- Vgs (Max) :
- +10V, -8V
- Power Dissipation :
- 3.2W
- Thickness :
- 1mm
- Additional Feature :
- AVALANCHE RATED
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Turn-Off Delay Time :
- 33 ns
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 200A
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Power Dissipation-Max :
- 3.2W Ta
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Rise Time :
- 18ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 8V
- DS Breakdown Voltage-Min :
- 30V
- Length :
- 5mm
- Datasheets
- CSD17311Q5

N-Channel Tape & Reel (TR) 2m Ω @ 30A, 8V +10V, -8V 4280pF @ 15V 31nC @ 4.5V 30V 8-PowerTDFN
CSD17311Q5 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4280pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 200A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.2V.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (3V 8V).
CSD17311Q5 Features
a continuous drain current (ID) of 32A
the turn-off delay time is 33 ns
based on its rated peak drain current 200A.
a threshold voltage of 1.2V
a 30V drain to source voltage (Vdss)
CSD17311Q5 Applications
There are a lot of Texas Instruments
CSD17311Q5 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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