CSD17310Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

21A Ta 100A Tc

Pin Count :

8

JESD-609 Code :

e3

Number of Pins :

8

Thickness :

1mm

Continuous Drain Current (ID) :

100A

Gate to Source Voltage (Vgs) :

10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

1.3V

Feedback Cap-Max (Crss) :

77 pF

Pbfree Code :

yes

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Rise Time :

11.5ns

Length :

4.9mm

Factory Lead Time :

16 Weeks

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Contact Plating :

Tin

Turn-Off Delay Time :

15 ns

Mounting Type :

Surface Mount

Number of Elements :

1

Number of Terminations :

5

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Turn On Delay Time :

6.5 ns

Transistor Application :

SWITCHING

Package / Case :

8-PowerTDFN

Power Dissipation :

3.1W

Mount :

Surface Mount

Power Dissipation-Max :

3.1W Ta

Width :

6mm

Fall Time (Typ) :

5 ns

Nominal Vgs :

1.3 V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Base Part Number :

CSD17310

ECCN Code :

EAR99

FET Type :

N-Channel

Vgs (Max) :

+10V, -8V

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 20A, 8V

Radiation Hardening :

No