CSD17310Q5A
- Mfr.Part #
- CSD17310Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A/100A 8VSON
- Stock
- 1,000
- In Stock :
- 1,000
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 6mm
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- +10V, -8V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Series :
- NexFET™
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- Nominal Vgs :
- 1.3 V
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 5
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Turn-Off Delay Time :
- 15 ns
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Lead Free :
- Contains Lead
- Factory Lead Time :
- 16 Weeks
- Power Dissipation-Max :
- 3.1W Ta
- Package / Case :
- 8-PowerTDFN
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Turn On Delay Time :
- 6.5 ns
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1560pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 8V
- Power Dissipation :
- 3.1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 100A Tc
- Contact Plating :
- Tin
- Thickness :
- 1mm
- Number of Pins :
- 8
- Pbfree Code :
- yes
- Rise Time :
- 11.5ns
- Gate to Source Voltage (Vgs) :
- 10V
- Threshold Voltage :
- 1.3V
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 4.9mm
- Gate Charge (Qg) (Max) @ Vgs :
- 11.6nC @ 4.5V
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 100A
- Base Part Number :
- CSD17310
- Rds On (Max) @ Id, Vgs :
- 5.1m Ω @ 20A, 8V
- Feedback Cap-Max (Crss) :
- 77 pF
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 5 ns
- Datasheets
- CSD17310Q5A

N-Channel Tape & Reel (TR) 5.1m Ω @ 20A, 8V +10V, -8V 1560pF @ 15V 11.6nC @ 4.5V 8-PowerTDFN
CSD17310Q5A Description
The NexFET? power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
CSD17310Q5A Features
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
CSD17310Q5A Applications
Notebook Point of Load
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications
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