CSD17308Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs (Max) :

+10V, -8V

Number of Terminations :

5

Continuous Drain Current (ID) :

14A

Feedback Cap-Max (Crss) :

35 pF

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Width :

3.3mm

Gate to Source Voltage (Vgs) :

10V

Turn-Off Delay Time :

9.9 ns

Drain to Source Breakdown Voltage :

30V

Series :

NexFET™

FET Type :

N-Channel

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Power Dissipation-Max :

2.7W Ta

ECCN Code :

EAR99

Fall Time (Typ) :

2.3 ns

Turn On Delay Time :

4.5 ns

Mounting Type :

Surface Mount

Terminal Position :

Dual

Thickness :

1mm

Element Configuration :

Single

Case Connection :

DRAIN

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 15V

Length :

3.3mm

Drain Current-Max (Abs) (ID) :

47A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

10.3m Ω @ 10A, 8V

Pbfree Code :

yes

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Nominal Vgs :

1.3 V

Pin Count :

8

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Current - Continuous Drain (Id) @ 25°C :

14A Ta 44A Tc

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

JESD-609 Code :

e3

Number of Channels :

1

Radiation Hardening :

No

Base Part Number :

CSD17308

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Contact Plating :

Tin

Max Junction Temperature (Tj) :

150°C

Avalanche Energy Rating (Eas) :

65 mJ

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

5.1nC @ 4.5V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.7W

Height :

1.1mm

Package / Case :

8-PowerTDFN

Threshold Voltage :

1.3V

Rise Time :

5.7ns