CSD17308Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

5.1nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Rise Time :

5.7ns

Pbfree Code :

yes

Fall Time (Typ) :

2.3 ns

Package / Case :

8-PowerTDFN

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Feedback Cap-Max (Crss) :

35 pF

Turn-Off Delay Time :

9.9 ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

14A Ta 44A Tc

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Additional Feature :

AVALANCHE RATED

Series :

NexFET™

Terminal Position :

Dual

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

10.3m Ω @ 10A, 8V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 15V

Gate to Source Voltage (Vgs) :

10V

Number of Channels :

1

Lead Free :

Contains Lead

Contact Plating :

Tin

Power Dissipation :

2.7W

Mount :

Surface Mount

REACH SVHC :

No SVHC

Thickness :

1mm

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

1.3V

Power Dissipation-Max :

2.7W Ta

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

4.5 ns

Continuous Drain Current (ID) :

14A

Vgs (Max) :

+10V, -8V

Base Part Number :

CSD17308

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

47A

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Element Configuration :

Single

Nominal Vgs :

1.3 V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Terminations :

5

JESD-609 Code :

e3

Height :

1.1mm

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Width :

3.3mm

Length :

3.3mm

Avalanche Energy Rating (Eas) :

65 mJ