CSD17304Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.3mm

Base Part Number :

CSD17304

Power Dissipation :

2.7W

Power Dissipation-Max :

2.7W Ta

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Transistor Application :

SWITCHING

Nominal Vgs :

1.3 V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Factory Lead Time :

6 Weeks

Current - Continuous Drain (Id) @ 25°C :

15A Ta 56A Tc

Fall Time (Typ) :

3.1 ns

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Pins :

8

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

955pF @ 15V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Vgs (Max) :

+10V, -8V

Contact Plating :

Tin

Length :

3.3mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.3V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

FET Type :

N-Channel

Rise Time :

9.1ns

ECCN Code :

EAR99

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pin Count :

8

Drain to Source Breakdown Voltage :

30V

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

56A

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Series :

NexFET™

Number of Terminations :

5

Turn-Off Delay Time :

10.4 ns

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

5.1 ns

Packaging :

Tape and Reel (TR)

Thickness :

1mm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 17A, 8V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

10V