CSD16570Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 12V

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Operating Mode :

ENHANCEMENT MODE

Thickness :

950μm

JESD-609 Code :

e3

Turn-Off Delay Time :

156 ns

Additional Feature :

AVALANCHE RATED

Number of Channels :

1

Vgs(th) (Max) @ Id :

1.9V @ 250μA

FET Type :

N-Channel

Pbfree Code :

yes

Terminal Position :

Dual

Lead Free :

Contains Lead

Width :

6mm

Transistor Element Material :

SILICON

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

100A

Peak Reflow Temperature (Cel) :

260

Series :

NexFET™

Rds On (Max) @ Id, Vgs :

0.59m Ω @ 50A, 10V

Length :

5mm

REACH SVHC :

No SVHC

Rise Time :

43ns

Number of Terminations :

5

Turn On Delay Time :

5 ns

Threshold Voltage :

1.5V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Package / Case :

8-PowerTDFN

Weight :

24.012046mg

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

72 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

59A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.2W Ta 195W Tc

Contact Plating :

Gold

Base Part Number :

CSD16570

Drain to Source Breakdown Voltage :

25V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

400A

Element Configuration :

Single