CSD16570Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Number of Elements :

1

Length :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 12V

Continuous Drain Current (ID) :

100A

Fall Time (Typ) :

72 ns

DS Breakdown Voltage-Min :

25V

Turn-Off Delay Time :

156 ns

Additional Feature :

AVALANCHE RATED

Terminal Form :

NO LEAD

Contact Plating :

Gold

Rds On (Max) @ Id, Vgs :

0.59m Ω @ 50A, 10V

Rise Time :

43ns

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Pins :

8

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Width :

6mm

Pulsed Drain Current-Max (IDM) :

400A

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Vgs (Max) :

±20V

Pbfree Code :

yes

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

1290 pF

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Base Part Number :

CSD16570

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead

Thickness :

950μm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

59A

Drain to Source Voltage (Vdss) :

25V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3.2W Ta 195W Tc

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Turn On Delay Time :

5 ns

Terminal Position :

Dual

Package / Case :

8-PowerTDFN