CSD16410Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

6 Weeks

Power Dissipation-Max :

3W Ta

FET Type :

N-Channel

Continuous Drain Current (ID) :

59A

Power Dissipation :

3W

Series :

NexFET™

Turn-Off Delay Time :

6.5 ns

Additional Feature :

AVALANCHE RATED

Mount :

Surface Mount

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Nominal Vgs :

1.9 V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

6.2 ns

Case Connection :

DRAIN

Fall Time (Typ) :

3.6 ns

Gate to Source Voltage (Vgs) :

16V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 12.5V

Base Part Number :

CSD16410

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

16A Ta 59A Tc

Drain to Source Breakdown Voltage :

25V

Feedback Cap-Max (Crss) :

52 pF

Number of Pins :

8

Length :

4.9mm

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

25V

Width :

6mm

Thickness :

1mm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 17A, 10V

Termination :

SMD/SMT

Vgs (Max) :

+16V, -12V

Transistor Application :

SWITCHING

Threshold Voltage :

1.9V

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Number of Terminations :

5

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Rise Time :

10.7ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pbfree Code :

yes