CSD16408Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

25V

Number of Pins :

8

Turn On Delay Time :

11.3 ns

Thickness :

1mm

Transistor Application :

SWITCHING

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Package / Case :

8-PowerTDFN

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

16V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

25ns

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 25A, 10V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 12.5V

FET Type :

N-Channel

Fall Time (Typ) :

10.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 4.5V

Base Part Number :

CSD16408

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

22A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Vgs (Max) :

+16V, -12V

Pin Count :

8

Contact Plating :

Tin

ECCN Code :

EAR99

Height :

1.05mm

DS Breakdown Voltage-Min :

25V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Contains Lead

Number of Elements :

1

Factory Lead Time :

6 Weeks

Series :

NexFET™

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

22A Ta 113A Tc

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Width :

6mm

Case Connection :

DRAIN

Radiation Hardening :

No

Power Dissipation :

3.1W

Power Dissipation-Max :

3.1W Ta

Continuous Drain Current (ID) :

113A