CSD16407Q5
- Mfr.Part #
- CSD16407Q5
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 31A/100A 8VSON
- Stock
- 11,392
- In Stock :
- 11,392
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 16 ns
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2660pF @ 12.5V
- Dual Supply Voltage :
- 25V
- Nominal Vgs :
- 1.6 V
- Power Dissipation-Max :
- 3.1W Ta
- REACH SVHC :
- No SVHC
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 1.6V
- Continuous Drain Current (ID) :
- 100A
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 25A, 10V
- Factory Lead Time :
- 12 Weeks
- Drain-source On Resistance-Max :
- 0.0033Ohm
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Length :
- 5mm
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 16V
- Package / Case :
- 8-PowerTDFN
- Fall Time (Typ) :
- 9 ns
- Peak Reflow Temperature (Cel) :
- 260
- Termination :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Series :
- NexFET™
- Pbfree Code :
- yes
- Rise Time :
- 18.4ns
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 25V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Height :
- 1.05mm
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 1.9V @ 250μA
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 200A
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 4.5V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 5
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Contains Lead
- Number of Pins :
- 8
- Thickness :
- 1mm
- Current - Continuous Drain (Id) @ 25°C :
- 31A Ta 100A Tc
- Vgs (Max) :
- +16V, -12V
- Power Dissipation :
- 3.1W
- Turn On Delay Time :
- 11.9 ns
- Base Part Number :
- CSD16407
- Datasheets
- CSD16407Q5

N-Channel Tape & Reel (TR) 2.4m Ω @ 25A, 10V +16V, -12V 2660pF @ 12.5V 18nC @ 4.5V 8-PowerTDFN
Description
The CSD16407Q5 is an N-Channel NexFET? Power MOSFET. In order to reduce losses in power conversion applications, the NexFETTM power MOSFET was created. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.
Features
-
Avalanche Rated
-
SON 5-mm × 6-mm Plastic Package
-
Ultralow Qg and Qgd
-
Low Thermal Resistance
-
Wide Bandwidth
Applications
-
Optimized for Synchronous FET Applications
-
Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
-
Power Supplies
-
DC-to-DC Converters
-
Low-Voltage Motor Controllers
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