CSD16403Q5A
- Mfr.Part #
- CSD16403Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 28A/100A 8VSON
- Stock
- 115
- In Stock :
- 115
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 8
- Case Connection :
- DRAIN
- Width :
- 6mm
- Turn-Off Delay Time :
- 15.2 ns
- Pin Count :
- 8
- Length :
- 4.9mm
- Base Part Number :
- CSD16403
- Termination :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 1.9V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-PowerTDFN
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 25V
- Current - Continuous Drain (Id) @ 25°C :
- 28A Ta 100A Tc
- Fall Time (Typ) :
- 9.2 ns
- Contact Plating :
- Tin
- Number of Terminations :
- 5
- Turn On Delay Time :
- 11.8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Vgs (Max) :
- +16V, -12V
- Power Dissipation-Max :
- 3.1W Ta
- Drain-source On Resistance-Max :
- 0.0037Ohm
- Factory Lead Time :
- 16 Weeks
- Avalanche Energy Rating (Eas) :
- 224 mJ
- Height :
- 1.1mm
- Pbfree Code :
- yes
- Lead Free :
- Contains Lead
- Mount :
- Surface Mount
- Series :
- NexFET™
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 18.3ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Continuous Drain Current (ID) :
- 100A
- Gate to Source Voltage (Vgs) :
- 16V
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 4.5V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 25V
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 2.8m Ω @ 20A, 10V
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Threshold Voltage :
- 1.6V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2660pF @ 12.5V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Thickness :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Nominal Vgs :
- 1.6 V
- Power Dissipation :
- 3.1W
- Datasheets
- CSD16403Q5A

N-Channel Tape & Reel (TR) 2.8m Ω @ 20A, 10V +16V, -12V 2660pF @ 12.5V 18nC @ 4.5V 8-PowerTDFN
CSD16403Q5A Description
The NexFET? power MOSFET has been designed Continuous Drain Current, TC = 25°C 100 A
ID to minimize losses in power conversion applications.
CSD16403Q5A Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated Qgd Gate Charge Gate to Drain 3.5 nC
Pb Free Terminal Plating VGS = 4.5V 2.9 m?
RoHS Compliant VGS = 10V 2.2 m?
Halogen Free
SON 5mm x 6mm Plastic Package
CSD16403Q5A Applications
Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control FET Applications
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