CSD16401Q5T

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Mfr.Part #
CSD16401Q5T
Manufacturer
Texas Instruments
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 100A 8VSON
Stock
57
In Stock :
57

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Manufacturer :
Texas Instruments
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
240A
Number of Terminations :
5
Rds On (Max) @ Id, Vgs :
1.6m Ω @ 40A, 10V
Surface Mount :
yes
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Lead Free :
Contains Lead
Terminal Form :
NO LEAD
Number of Elements :
1
Factory Lead Time :
6 Weeks
Base Part Number :
CSD16401
Thickness :
1mm
Package / Case :
8-PowerTDFN
Drain-source On Resistance-Max :
0.0023Ohm
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
25V
Series :
NexFET™
Terminal Position :
Dual
Vgs (Max) :
+16V, -12V
RoHS Status :
ROHS3 Compliant
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mounting Type :
Surface Mount
Terminal Finish :
Matte Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C :
100A Ta
Additional Feature :
AVALANCHE RATED
Feedback Cap-Max (Crss) :
230 pF
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Height :
1.05mm
Transistor Application :
SWITCHING
Length :
5mm
Reach Compliance Code :
not_compliant
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Drain to Source Voltage (Vdss) :
25V
Avalanche Energy Rating (Eas) :
500 mJ
Power Dissipation-Max :
3.1W Ta
Vgs(th) (Max) @ Id :
1.9V @ 250μA
Pbfree Code :
yes
Width :
6mm
Datasheets
CSD16401Q5T
Introducing Transistors - FETs, MOSFETs - Single Texas Instruments CSD16401Q5T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Base Part Number:CSD16401, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, CSD16401Q5T pinout, CSD16401Q5T datasheet PDF, CSD16401Q5T amp .Beyond Transistors - FETs, MOSFETs - Single Texas Instruments CSD16401Q5T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments CSD16401Q5T


N-Channel Tape & Reel (TR) 1.6m Ω @ 40A, 10V +16V, -12V 4100pF @ 12.5V 29nC @ 4.5V 25V 8-PowerTDFN

CSD16401Q5T Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4100pF @ 12.5V.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

CSD16401Q5T Features


the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 240A.
a 25V drain to source voltage (Vdss)


CSD16401Q5T Applications


There are a lot of Texas Instruments
CSD16401Q5T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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