CSD16401Q5T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

6 Weeks

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.0023Ohm

Pbfree Code :

yes

Length :

5mm

Series :

NexFET™

DS Breakdown Voltage-Min :

25V

Width :

6mm

JESD-609 Code :

e3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

25V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 12.5V

Terminal Form :

NO LEAD

Number of Pins :

8

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

CSD16401

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

500 mJ

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Package / Case :

8-PowerTDFN

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 40A, 10V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.1W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.05mm

Vgs (Max) :

+16V, -12V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Feedback Cap-Max (Crss) :

230 pF

Thickness :

1mm