CSD16401Q5T
- Mfr.Part #
- CSD16401Q5T
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 100A 8VSON
- Stock
- 57
- In Stock :
- 57
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 240A
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 40A, 10V
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead
- Terminal Form :
- NO LEAD
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- CSD16401
- Thickness :
- 1mm
- Package / Case :
- 8-PowerTDFN
- Drain-source On Resistance-Max :
- 0.0023Ohm
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 25V
- Series :
- NexFET™
- Terminal Position :
- Dual
- Vgs (Max) :
- +16V, -12V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 12.5V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Additional Feature :
- AVALANCHE RATED
- Feedback Cap-Max (Crss) :
- 230 pF
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.05mm
- Transistor Application :
- SWITCHING
- Length :
- 5mm
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain to Source Voltage (Vdss) :
- 25V
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Power Dissipation-Max :
- 3.1W Ta
- Vgs(th) (Max) @ Id :
- 1.9V @ 250μA
- Pbfree Code :
- yes
- Width :
- 6mm
- Datasheets
- CSD16401Q5T

N-Channel Tape & Reel (TR) 1.6m Ω @ 40A, 10V +16V, -12V 4100pF @ 12.5V 29nC @ 4.5V 25V 8-PowerTDFN
CSD16401Q5T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4100pF @ 12.5V.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
CSD16401Q5T Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 240A.
a 25V drain to source voltage (Vdss)
CSD16401Q5T Applications
There are a lot of Texas Instruments
CSD16401Q5T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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