CSD16401Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Thickness :

1mm

Fall Time (Typ) :

12.7 ns

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 40A, 10V

Length :

5mm

Power Dissipation-Max :

3.1W Ta

REACH SVHC :

No SVHC

Number of Terminations :

5

Feedback Cap-Max (Crss) :

230 pF

Gate to Source Voltage (Vgs) :

16V

Drain-source On Resistance-Max :

0.0023Ohm

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Factory Lead Time :

6 Weeks

Dual Supply Voltage :

25V

Contact Plating :

Tin

Turn-Off Delay Time :

20 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

CSD16401

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

38A Ta 100A Tc

Mounting Type :

Surface Mount

Power Dissipation :

3.1W

Pulsed Drain Current-Max (IDM) :

240A

Drain to Source Breakdown Voltage :

25V

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

+16V, -12V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Package / Case :

8-PowerTDFN

Width :

6mm

Series :

NexFET™

Continuous Drain Current (ID) :

100A

Pbfree Code :

yes

Termination :

SMD/SMT

FET Type :

N-Channel

Terminal Position :

Dual

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 12.5V

Number of Pins :

8

Turn On Delay Time :

16.6 ns

Number of Elements :

1

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Radiation Hardening :

No

Threshold Voltage :

1.5V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

30ns

Pin Count :

8

Element Configuration :

Single

Height :

1.05mm

Avalanche Energy Rating (Eas) :

500 mJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Nominal Vgs :

1.5 V