CSD16401Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 40A, 10V

Power Dissipation-Max :

3.1W Ta

Width :

6mm

Nominal Vgs :

1.5 V

Rise Time :

30ns

Contact Plating :

Tin

Factory Lead Time :

6 Weeks

Threshold Voltage :

1.5V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

38A Ta 100A Tc

Base Part Number :

CSD16401

Fall Time (Typ) :

12.7 ns

Power Dissipation :

3.1W

Drain-source On Resistance-Max :

0.0023Ohm

FET Type :

N-Channel

Case Connection :

DRAIN

Continuous Drain Current (ID) :

100A

Radiation Hardening :

No

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

240A

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

500 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Thickness :

1mm

Height :

1.05mm

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

16.6 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5mm

Mounting Type :

Surface Mount

Feedback Cap-Max (Crss) :

230 pF

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

16V

Pin Count :

8

Dual Supply Voltage :

25V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)

REACH SVHC :

No SVHC

Number of Elements :

1

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Vgs (Max) :

+16V, -12V

Turn-Off Delay Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 12.5V

Series :

NexFET™

Transistor Application :

SWITCHING

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

25V