CSD16342Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 4.5V

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Pbfree Code :

yes

Fall Time (Typ) :

3.1 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Pins :

8

Threshold Voltage :

850mV

Contact Plating :

Tin

Continuous Drain Current (ID) :

100A

Power Dissipation-Max :

3W Ta

DS Breakdown Voltage-Min :

25V

Drain to Source Voltage (Vdss) :

25V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 12.5V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Lead Free :

Contains Lead

Rise Time :

16.6ns

Number of Elements :

1

Length :

4.9mm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 8V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 20A, 8V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Mounting Type :

Surface Mount

Height :

1.1mm

Mount :

Surface Mount

Power Dissipation :

3W

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Width :

6mm

Thickness :

1mm

Feedback Cap-Max (Crss) :

69 pF

Turn On Delay Time :

5.2 ns

Gate to Source Voltage (Vgs) :

10V

Factory Lead Time :

16 Weeks

Base Part Number :

CSD16342

Package / Case :

8-PowerTDFN

Vgs (Max) :

+10V, -8V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

13.4 ns

Radiation Hardening :

No

Case Connection :

DRAIN

Series :

NexFET™