CSD16340Q3T
- Mfr.Part #
- CSD16340Q3T
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 60A 8VSON
- Stock
- 2,262
- In Stock :
- 2,262
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 4.8 ns
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- CSD16340
- Continuous Drain Current (ID) :
- 60A
- Feedback Cap-Max (Crss) :
- 69 pF
- Series :
- NexFET™
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 8V
- Number of Terminations :
- 5
- Pulsed Drain Current-Max (IDM) :
- 115A
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Fall Time (Typ) :
- 5.2 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 12.5V
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 20A, 8V
- Drain to Source Voltage (Vdss) :
- 25V
- Thickness :
- 1mm
- Rise Time :
- 16.1ns
- DS Breakdown Voltage-Min :
- 25V
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 21A
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 13.8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9.2nC @ 4.5V
- Power Dissipation-Max :
- 3W Ta
- JESD-609 Code :
- e3
- Package / Case :
- 8-PowerTDFN
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- +10V, -8V
- Length :
- 3.3mm
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 10V
- Terminal Form :
- NO LEAD
- Additional Feature :
- AVALANCHE RATED
- Width :
- 3.3mm
- Datasheets
- CSD16340Q3T
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N-Channel Tape & Reel (TR) 4.5m Ω @ 20A, 8V +10V, -8V 1350pF @ 12.5V 9.2nC @ 4.5V 25V 8-PowerTDFN
CSD16340Q3T Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1350pF @ 12.5V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.A device can conduct a maximum continuous current of [21A] according to its drain current.It is [13.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 115A.A turn-on delay time of 4.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 8V).
CSD16340Q3T Features
a continuous drain current (ID) of 60A
the turn-off delay time is 13.8 ns
based on its rated peak drain current 115A.
a 25V drain to source voltage (Vdss)
CSD16340Q3T Applications
There are a lot of Texas Instruments
CSD16340Q3T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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