CSD16340Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

25V

Gate to Source Voltage (Vgs) :

10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

60A

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Package / Case :

8-PowerTDFN

Pbfree Code :

yes

Turn-Off Delay Time :

13.8 ns

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 4.5V

Number of Terminations :

5

DS Breakdown Voltage-Min :

25V

Length :

3.3mm

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

4.8 ns

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 8V

Series :

NexFET™

Height :

1.1mm

Nominal Vgs :

850 mV

Number of Elements :

1

Radiation Hardening :

No

Threshold Voltage :

850mV

Current - Continuous Drain (Id) @ 25°C :

21A Ta 60A Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 12.5V

Fall Time (Typ) :

5.2 ns

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 20A, 8V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

+10V, -8V

Base Part Number :

CSD16340

Width :

3.3mm

Rise Time :

16.1ns

Factory Lead Time :

12 Weeks

Thickness :

1mm

Feedback Cap-Max (Crss) :

69 pF

Power Dissipation-Max :

3W Ta

Element Configuration :

Single

REACH SVHC :

No SVHC

Pin Count :

8

Power Dissipation :

3W

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Terminal Position :

Dual