CSD16340Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Feedback Cap-Max (Crss) :

69 pF

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 8V

Contact Plating :

Tin

Pin Count :

8

REACH SVHC :

No SVHC

Height :

1.1mm

Number of Terminations :

5

Turn On Delay Time :

4.8 ns

Current - Continuous Drain (Id) @ 25°C :

21A Ta 60A Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Width :

3.3mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Lead Free :

Contains Lead

DS Breakdown Voltage-Min :

25V

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

25V

Fall Time (Typ) :

5.2 ns

Length :

3.3mm

Number of Pins :

8

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

10V

Power Dissipation :

3W

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 12.5V

Base Part Number :

CSD16340

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 20A, 8V

Continuous Drain Current (ID) :

60A

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 4.5V

Mount :

Surface Mount

Package / Case :

8-PowerTDFN

Thickness :

1mm

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

13.8 ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Element Material :

SILICON

Vgs (Max) :

+10V, -8V

Rise Time :

16.1ns

Nominal Vgs :

850 mV

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3W Ta

Pbfree Code :

yes

Threshold Voltage :

850mV

Element Configuration :

Single