CSD16340Q3
- Mfr.Part #
- CSD16340Q3
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 21A/60A 8VSON
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 8
- Nominal Vgs :
- 850 mV
- Element Configuration :
- Single
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Thickness :
- 1mm
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 60A Tc
- Rise Time :
- 16.1ns
- Case Connection :
- DRAIN
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 20A, 8V
- Gate to Source Voltage (Vgs) :
- 10V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Feedback Cap-Max (Crss) :
- 69 pF
- Package / Case :
- 8-PowerTDFN
- Continuous Drain Current (ID) :
- 60A
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 5.2 ns
- Factory Lead Time :
- 12 Weeks
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Vgs (Max) :
- +10V, -8V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 8V
- DS Breakdown Voltage-Min :
- 25V
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 850mV
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 4.8 ns
- Length :
- 3.3mm
- Base Part Number :
- CSD16340
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Width :
- 3.3mm
- Number of Pins :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 9.2nC @ 4.5V
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 3W Ta
- Turn-Off Delay Time :
- 13.8 ns
- Drain to Source Voltage (Vdss) :
- 25V
- Lead Free :
- Contains Lead
- Height :
- 1.1mm
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 12.5V
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 3W
- Series :
- NexFET™
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- CSD16340Q3

N-Channel Tape & Reel (TR) 4.5m Ω @ 20A, 8V +10V, -8V 1350pF @ 12.5V 9.2nC @ 4.5V 25V 8-PowerTDFN
CSD16340Q3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1350pF @ 12.5V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 13.8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.Activation of any electrical operation happens at threshold voltage, and this transistor has 850mV threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 8V volts (2.5V 8V).
CSD16340Q3 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 13.8 ns
a threshold voltage of 850mV
a 25V drain to source voltage (Vdss)
CSD16340Q3 Applications
There are a lot of Texas Instruments
CSD16340Q3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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