CSD16327Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

6.3 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3W Ta

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

10V

Base Part Number :

CSD16327

Width :

3.3mm

Vgs (Max) :

+10V, -8V

Continuous Drain Current (ID) :

22A

Series :

NexFET™

Element Configuration :

Single

Lead Free :

Contains Lead

Number of Channels :

1

Power Dissipation :

2.8W

Terminal Position :

Dual

Turn On Delay Time :

5.3 ns

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Height :

1.1mm

Feedback Cap-Max (Crss) :

65 pF

Threshold Voltage :

1.2V

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 4.5V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

60A

Mount :

Surface Mount

REACH SVHC :

Unknown

Length :

3.3mm

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 12.5V

Reach Compliance Code :

not_compliant

Thickness :

1mm

Drain to Source Breakdown Voltage :

25V

JESD-609 Code :

e3

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Pbfree Code :

yes

Turn-Off Delay Time :

13 ns

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Rise Time :

15ns

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0065ohm

Rds On (Max) @ Id, Vgs :

4m Ω @ 24A, 8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED