CSD16323Q3C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

6.3 ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 24A, 8V

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 4.5V

Contact Plating :

Tin

Power Dissipation-Max :

3W Ta

Case Connection :

DRAIN

FET Type :

N-Channel

Base Part Number :

CSD16323

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Rise Time :

15ns

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

10V

Width :

3.3mm

Vgs (Max) :

+10V, -8V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

21A

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

112A

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Thickness :

1mm

Number of Elements :

1

Power Dissipation :

3W

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

8-PowerTDFN

Drain-source On Resistance-Max :

0.0072Ohm

Mounting Type :

Surface Mount

JESD-30 Code :

S-PDSO-N5

Series :

NexFET™

Drain Current-Max (Abs) (ID) :

60A

Terminal Form :

NO LEAD

Current - Continuous Drain (Id) @ 25°C :

21A Ta 60A Tc

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Length :

3.3mm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 12.5V

Number of Terminations :

5

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

125 mJ

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5.3 ns

Number of Pins :

8

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

25V

Element Configuration :

Single

ECCN Code :

EAR99