CSD16321Q5C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.1V

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Height :

1.05mm

Number of Elements :

1

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 12.5V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

DS Breakdown Voltage-Min :

25V

Continuous Drain Current (ID) :

100A

Thickness :

1mm

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Drain to Source Voltage (Vdss) :

25V

Fall Time (Typ) :

17 ns

Radiation Hardening :

No

Element Configuration :

Single

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Length :

5mm

Gate to Source Voltage (Vgs) :

10V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 8V

Width :

6mm

Power Dissipation-Max :

3.1W Ta

Lifecycle Status :

NRND (Last Updated: 4 weeks ago)

Package / Case :

8-PowerTDFN

Turn-Off Delay Time :

27 ns

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Turn On Delay Time :

9 ns

Contact Plating :

Tin

Nominal Vgs :

1.1 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

31A Ta 100A Tc

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

200A

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Vgs (Max) :

+10V, -8V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Rise Time :

15ns

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

3.1W

Base Part Number :

CSD16321

FET Type :

N-Channel

Transistor Application :

SWITCHING