CSD16321Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.1V

Rise Time :

15ns

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Turn-Off Delay Time :

27 ns

Number of Elements :

1

Width :

6mm

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Radiation Hardening :

No

JESD-609 Code :

e3

Thickness :

1mm

Pbfree Code :

yes

Factory Lead Time :

6 Weeks

Pin Count :

8

Turn On Delay Time :

9 ns

Power Dissipation :

3.1W

Package / Case :

8-PowerTDFN

Length :

5mm

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

31A Ta 100A Tc

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

3.1W Ta

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0035Ohm

Mount :

Surface Mount

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Base Part Number :

CSD16321

Pulsed Drain Current-Max (IDM) :

200A

Dual Supply Voltage :

25V

Fall Time (Typ) :

17 ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

100A

Series :

NexFET™

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 12.5V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

10V

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Nominal Vgs :

1.1 V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

FET Type :

N-Channel

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Vgs (Max) :

+10V, -8V

Contact Plating :

Tin

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 8V

Height :

1.05mm

Drain to Source Breakdown Voltage :

25V