CSD16301Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

6-SMD, Flat Leads

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

24m Ω @ 4A, 8V

Vgs(th) (Max) @ Id :

1.55V @ 250μA

Drain-source On Resistance-Max :

0.034Ohm

Drain Current-Max (Abs) (ID) :

5A

Rise Time :

4.4ns

Current - Continuous Drain (Id) @ 25°C :

5A Tc

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Width :

2mm

Nominal Vgs :

1.2 V

Turn On Delay Time :

2.7 ns

Base Part Number :

CSD16301

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 12.5V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

10V

Element Configuration :

Single

Continuous Drain Current (ID) :

5A

Thickness :

750μm

Drain to Source Breakdown Voltage :

25V

Terminal Position :

Dual

Pbfree Code :

yes

Height :

800μm

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

JESD-609 Code :

e4

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

1.7 ns

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Power Dissipation :

2.3W

Series :

NexFET™

Length :

2mm

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

4.1 ns

Pin Count :

6

Threshold Voltage :

1.2V

Number of Terminations :

6

Number of Pins :

6

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Channels :

1

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

20A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 4.5V

Vgs (Max) :

+10V, -8V

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.3W Ta

Number of Elements :

1